R&D Engineer for Advanced Metallization

R&D Engineer for Advanced Metallization Background The continued scaling of CMOS logic and memory technologies is increasingly limited by the performance, resistivity, and integration complexity of advanced metallization schemes. As device architectures transition to deeply scaled nodes and 3D structures (e.g., CFET, high-aspect-ratio interconnects, and advanced memory stacking), conventional materials and processes such as Cu dual damascene face fundamental challenges related to line resistanc…