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PhD Research Fellow in Multi-Level Resistive Memory Cells for Ternary Computing

UNIVERSITETET I SØRØST-NORGE CAMPUS VESTFOLD

Noruega📅 19/10/2026

Descripción

Welcome to USN The University of Southeastern Norway (USN) ranks as the country's fourth largest higher education institution. We are a vibrant community of approximately 18,000 students and 1,900 employees. Video: https://vimeo.com/898549899/60305e2540 About the position The Faculty of Technology, Natural Sciences and Maritime Sciences invites applications for a 100% PhD Research Fellow position in fabrication and characterization of multi-level resistive memory technology. The position is a three-year, full-time research appointment with no teaching obligations. The doctoral programme in Technology comprises approximately six months (30 ECTS) of coursework, an article-based thesis demonstrating independent research, active participation in national and international research environments, research dissemination, a trial lecture, and public defence. Read more in our PhD handbook . Admission to the Faculty's doctoral programme in Technology must be applied for and granted within three months of starting the position. The place of work is at Campus Vestfold (Raveien 215, Borre, Norway. Located on campus is the MST-lab, part of the national NorFab infrastructure for fabrication and characterization. Your personnel manager will be Marius Tannum (Head of department, Microsystems, Campus Vestfold). About the doctoral project Resistive memory (ReRAM, also known as memristors) has matured rapidly. It offers fast writes at lower power, has high endurance and non-volatile retention. Recently Nordic Semiconductor released the nRF54L microcontroller series which feature binary ReRAM to replace flash memory at scale. Multi-level operation, however, remains challenging with device-to-device and cycle-to-cycle variation, state drift, read disturbs and non-linear multi-state programming. This PhD project aims to address these issues by fabricating and characterizing ReRAM cells optimized for balanced ternary (symbols -1, 0 and 1), storing ~58% more information per cell than binary
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