Descripción
Part of your life. Part of tomorrow. We make life easier, safer and greener, with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future. Efficient use of energy, environmentally-friendly mobility and security in a connected world we solve some of the most critical challenges that our society faces while taking a conscientious approach to the use of natural resources. 1 Principal Engineer SiC Epitaxy (f/m/div) ID: HRC1259944 Job Beschreibung Jobfamilie Research & Development Type of employment Vollzeit Duration of employment Unbefristet Preferred start date ab sofort Join As Berufserfahrene*r (inkl. Management Positionen)Join us on our journey to the worlds Silicon Carbide future. In your new role you will: * Be responsible for the development and further optimization of SiC epitaxy single process solutions in terms of reliability and yield toenable world class devices * Hand over qualified processes and control concepts to the production team * Work in close collaboration with the technology development team and production in Villach and Kulim You are best equipped for this task if you have: * A master degree / PhD in Physics, Applied Chemistry or MaterialScience * At least 5 years of relevant working experience in the field of Silicon Carbide epitaxy * Experience in optimizing tools and processes for high performance and high reliability SiC devices * Fluent English skills with German as a plus This position is subject to the collective agreement for workers and employees in the electrical and electronics industry, at least employment group I (https://www.feei.at/leistungen/informations-service/mindestlohne-und-gehalter). The monthly salary is paid 14 times p.a. A higher payment is negotiable depending on your expertise and skills. Furthermore, Infineon offers additional employee benefits.Apply to this position online by following the URL and entering the Job ID in our job search.htt